mustafa ilhanMehmet İsmail KATILutfiye feray Guleryuz2025-04-142025-04-142024http://hdl.handle.net/20.500.14701/54734In this paper, the effect of boron doping on dielectric properties was investigated using BaTa2O6:xSm3+, yB3+ (x=5 mol%, y= 0, 5, 15, 30, 50, 70, 100 mol%) and BaTa2O6:xDy3+, yB3+ (x=10 mol%, y= 0, 5, 15, 30, 50, 70, 100 mol%) tungsten bronze ceramics fabricated by the conventional solid-state synthesis. XRD (X-ray diffraction) results revealed a single BaTa2O6 phase with space group P4/mbm (127) for both series. Additionally, in both series, there was an increase in crystallite sizes and cell parameters with increasing B3+ concentration. SEM (scanning electron microscopy) examinations indicated that the increase of boron promoted grain growth and grain elongation. In impedance results, in both series, increasing boron concentration up to 100 mol% increased the dielectric constant. Moreover, the presence of boron was associated with a relaxing transition in the B-site substitution of RE3+ (RE=Sm, Dy) ions and a contribution to the dielectric permittivity, while the increase in tetragonality or c/a ratio for both series was ascribed to the increase in the ferroelectric Curie temperature. In both series, a decrease in dielectric loss (tan δ) occurred, which was explained by the increasing sintering temperature effect with increasing boron, reducing the mobility of oxygen vacancies.İngilizceNanobilim ve NanoteknolojiMalzeme BilimleriÖzellik ve TestMalzeme BilimleriSeramik10.18596/jotcsa.1453941