Içelli O.Çankaya G.Çetin A.2024-07-222024-07-22200901689002http://akademikarsiv.cbu.edu.tr:4000/handle/123456789/18764The linear differential scattering coefficients at 60 keV have been measured for GaAs, p-Si and n-Si semiconductors at seven angles ranging from 60° to 120° at intervals of 10°. The results have been compared with relativistic and non-relativistic theoretical values. The objective of this work is to seek evidence whether there is a relationship between the LDSC and the scattering angle. The LDSCs have been measured with energy-dispersive X-ray fluorescence spectroscopy (EDXRF) for wafers as GaAs, n- and p-type Si. This is the first time the LDSCs have been measured at <100 keV energies, so there is no comparable findings reported in the literature. © 2009 Elsevier B.V. All rights reserved.EnglishEnergy dispersive spectroscopyFluorescenceFluorescence spectroscopyGallium arsenideIII-V semiconductorsSemiconducting galliumSemiconducting gallium arsenideX raysDifferential scatteringEnergy dispersive X-ray fluorescenceMolecular scatteringP-type SiScattering anglesTheoretical valuesX ray fluorescence spectrometrySilicon wafersArticle10.1016/j.nima.2009.04.005