Lee H.-J.Lee S.-H.Yildiz F.Jeong Y.H.2024-07-222024-07-22200703048853http://akademikarsiv.cbu.edu.tr:4000/handle/123456789/19329We examined growth conditions to obtain the best quality epitaxial Co-doped ZnO thin films by the laser MBE deposition technique. The RHEED pattern and XRD analysis showed that the growth mode is layer-by-layer and a single phase of the wurtzite ZnO structure results at the optimum growth condition, that is, laser fluence, oxygen partial pressure and substrate temperature being at 0.45 J/cm2, 1.0×10-6 torr and 550 °C, respectively. From AFM measurements, the root mean square value of surface roughness was determined to be about 2 Å. The epitaxial Co-doped ZnO thin films were shown to possess intrinsic ferromagnetic ordering at room temperature. © 2006 Elsevier B.V. All rights reserved.EnglishCobaltDoping (additives)Epitaxial filmsMagnetic propertiesMagnetic semiconductorsMolecular beam epitaxyReflection high energy electron diffractionDiluted magnetic semiconductorsLaser MBEMean square valueOptimum growth conditionZinc oxideArticle10.1016/j.jmmm.2006.10.1020