Wang Y.Yang B.Can N.Townsend P.D.2024-07-222024-07-22201114786435http://akademikarsiv.cbu.edu.tr:4000/handle/123456789/18119In the majority of cases, the effects of ion implantation are confined close to the implant zone but, potentially, the resultant distortions and chemical modifications could catalyse relaxations extending into the bulk substrate. Such possibilities are rarely considered but the present data suggest that high dose ion implantation of ZnO has induced bulk changes. Surface implants with Cu and Tb strongly modified the low temperature bulk thermoluminescence properties generated by X-ray irradiation. Suggestions are proposed for the possible mechanisms for bulk relaxations and structural characteristics, which may indicate where such instability may occur in other lattice structures. © 2011 Taylor & Francis.EnglishAll Open Access; Green Open AccessChemical modificationII-VI semiconductorsIonsNanoparticlesPhase transitionsTemperatureThermoluminescenceZinc oxideHigh-dose ion implantationLattice structuresLow temperaturesPossible mechanismsStructural characteristicsSurface implantThermoluminescence propertiesX ray irradiationIon implantationArticle10.1080/14786435.2010.518986