Telli M.B.Bharadwaja S.S.N.Biegalski M.D.Trolier-Mckinstry S.2024-07-222024-07-22200600036951http://akademikarsiv.cbu.edu.tr:4000/handle/123456789/19428(00l) epitaxial AgTa O3 and AgNb O3 thin films were prepared on (001) SrRu O3 (001) LaAl O3 substrates by chemical solution deposition. The dielectric constants and loss of ∼300 nm thick films were 110±10 and 0.025±0.005 for AgTa O3 and 550±55 and 0.020±0.005 for AgNb O3 at room temperature. In both films, the temperature coefficient of capacitance is smaller than that for bulk ceramics of the same composition. The capacitance changes from -20 to 120 °C were ≤1.2% for AgTa O3 and ≤3.6% for AgNb O3. The tunability of the AgTa O3 film was 1.6% at 230 kVcm field, while 21% tunability was measured for AgNb O3 at 190 kVcm. © 2006 American Institute of Physics.EnglishCapacitanceEpitaxial growthMeasurement theoryPermittivitySilver compoundsSubstratesChemical solution depositionTemperature coefficientsThin filmsArticle10.1063/1.2403918