Browsing by Author "Sikder S."

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    Effect of various layers on improving the photovoltaic efficiency of Al/ZnO/CdS/CdTe/Cu2O/Ni solar cells
    (Elsevier B.V., 2023) Hosen R.; Sikder S.; Uddin M.S.; Haque M.M.; Mamur H.; Bhuiyan M.R.A.
    The photovoltaic (PV) cell structure containing Al/ZnO/CdS/CdTe/Cu2O/Ni has been simulated using the SCAPS-1D software. The PV device includes a zinc oxide (ZnO) transparent conductive oxide (TCO) window layer, a cadmium sulfide (CdS) buffer layer, and a cadmium telluride (CdTe) absorber layer. Additionally, an electron reflected-hole transport layer (ER-HTL) comprising cuprous oxide (Cu2O) is introduced between the absorber layer and the back metal contact. Aluminum (Al) and nickel (Ni) serve as the upper/top and back contact materials, respectively, interconnecting the layers. The back contact materials, the thickness of the absorber, buffer, and window layers, the acceptor density of the absorber layer, the donor density of the buffer layer, the series and shunt resistance, as well as temperature, were all modified to investigate the PV performance of this structure. The PV performance parameters are evaluated through the open-circuit voltage (VOC), short-circuit current (JSC), fill factor (FF), and power conversion efficiency (PCE). To achieve optimal performance, it is recommended to set the acceptor and donor densities for the absorber and buffer layers at 1017 cm−3. These desired densities can be attained by using a window and buffer layer thickness of 100 nm, an absorber layer thickness of 2500 nm, and an ER-HTL of 50 nm. The optimized model demonstrates PV performance characteristics of 1.4811 V for VOC, 28.682434 mA/cm2 for JSC, 74.91 % for FF, and 31.82 % for PCE under the AM 1.5 G spectrum. Furthermore, it exhibits a quantum efficiency of around 100 % at visible wavelengths. © 2023 The Authors
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    Photovoltaic performance enhancement of Al/ZnO:Al/i-ZnO/CdS /CIGS/Pt solar cell using SCAPS-1D software
    (Elsevier B.V., 2024) Uddin M.S.; Hosen R.; Sikder S.; Mamur H.; Bhuiyan M.R.A.
    The high-performance Cu(In,Ga)Se2 (CIGS) absorber layer is simulated by the SCAPS-1D software. A CIGS absorber layer, a cadmium sulfide (CdS) buffer layer, intrinsic zinc oxide (i:ZnO), and aluminum-doped zinc oxide (Al:ZnO), also known as transparent conductive oxide (TCO), are all included in the cell structure. These layers are connected to upper/top and back contacts made of aluminum (Al) and platinum (Pt). All optimizations employed in cell structure have a thin layer of Al/ZnO:Al/i-ZnO/CdS/CIGS/Pt. The open-circuit voltage (Voc), short-circuit current (Jsc), fill factor (FF), and efficiency (η) were all investigated in this study, along with the effects of back contact, absorber and buffer layer thickness, the absorber layer's acceptor density, the buffer layer's donor density, the absorber and buffer layer's defect densities, performance of interface defect density, series and shunt resistance, and temperature. To achieve optimal performance, it is recommended to set the acceptor and donor densities for the absorber and buffer layers at 1018 cm−3, while maintaining defect densities at 1014 cm−3. These desired densities can be attained by using a window layer thickness of 200 nm, a buffer layer thickness of 40 nm, and an absorber layer thickness of 2500 nm. The optimized model demonstrates photovoltaic (PV) performance characteristics of 0.8975 V for VOC, 34.245732 mA/cm2 for JSC, 86.81% for FF, and 26.68% for power conversion efficiency (PCE) under the AM 1.5 G spectrum. Furthermore, it exhibits a quantum efficiency of 98.86% at visible wavelengths. © 2023 The Authors
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    Optimizing layer configuration and material selection to enhance CIGS solar cell performance through computational simulation
    (Elsevier B.V., 2025) Sikder S.; Hasan M.K.; Mamur H.; Bhuiyan M.R.A.
    The increasing demand for renewable energy has driven research into advanced photovoltaic (PV) technologies for solar cells (SCs). Copper indium gallium selenide (CIGS) SCs present numerous benefits, such as high absorption efficiency, compatibility with flexible substrates, and potential for cost-effective production. This study utilizes SCAPS-1D software to optimize a CIGS-based SC structure featuring a novel Al/ZnO/ZnMnO/CIGS/Cu2O/Ni configuration. We systematically optimized key parameters, including material selection, layer thickness, doping concentrations, series and shunt resistances, and temperature, to enhance device performance. Our results demonstrate that an optimal configuration with a 3000 nm thick CIGS absorber layer, a 50 nm thick zinc oxide (ZnO) window layer, zinc manganese oxide (ZnMnO) buffer layers, and a 10 nm thick cuprous oxide (Cu2O) electron-reflecting hole transport layer (ER-HTL) achieves an impressive open-circuit voltage (VOC) of 1.0112 V, a short-circuit current density (JSC) of 38.80 mA/cm2, a fill factor (FF) of 81.13 %, and a power conversion efficiency (PCE) of 31.84 % under AM1.5G solar spectra. By minimizing series resistance and maximizing shunt resistance, we reduced resistive losses, voltage drop, and current leakage, thus enhancing overall device performance. Additionally, the device exhibited a remarkable quantum efficiency (QE) of approximately 95.54 % within the visible wavelength range. These findings contribute to a deeper understanding of CIGS solar cells and guide future research aimed at optimizing materials and designs to improve efficiency and stability, ultimately advancing affordable solar energy solutions. © 2025 The Authors