Browsing by Author "Uddin M.S."

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    Effect of various layers on improving the photovoltaic efficiency of Al/ZnO/CdS/CdTe/Cu2O/Ni solar cells
    (Elsevier B.V., 2023) Hosen R.; Sikder S.; Uddin M.S.; Haque M.M.; Mamur H.; Bhuiyan M.R.A.
    The photovoltaic (PV) cell structure containing Al/ZnO/CdS/CdTe/Cu2O/Ni has been simulated using the SCAPS-1D software. The PV device includes a zinc oxide (ZnO) transparent conductive oxide (TCO) window layer, a cadmium sulfide (CdS) buffer layer, and a cadmium telluride (CdTe) absorber layer. Additionally, an electron reflected-hole transport layer (ER-HTL) comprising cuprous oxide (Cu2O) is introduced between the absorber layer and the back metal contact. Aluminum (Al) and nickel (Ni) serve as the upper/top and back contact materials, respectively, interconnecting the layers. The back contact materials, the thickness of the absorber, buffer, and window layers, the acceptor density of the absorber layer, the donor density of the buffer layer, the series and shunt resistance, as well as temperature, were all modified to investigate the PV performance of this structure. The PV performance parameters are evaluated through the open-circuit voltage (VOC), short-circuit current (JSC), fill factor (FF), and power conversion efficiency (PCE). To achieve optimal performance, it is recommended to set the acceptor and donor densities for the absorber and buffer layers at 1017 cm−3. These desired densities can be attained by using a window and buffer layer thickness of 100 nm, an absorber layer thickness of 2500 nm, and an ER-HTL of 50 nm. The optimized model demonstrates PV performance characteristics of 1.4811 V for VOC, 28.682434 mA/cm2 for JSC, 74.91 % for FF, and 31.82 % for PCE under the AM 1.5 G spectrum. Furthermore, it exhibits a quantum efficiency of around 100 % at visible wavelengths. © 2023 The Authors
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    Influence of Different Layers on Enhancing the PV Performance of Al/ZnO/ZnMnO/CIGSSe/Cu2O/Ni Solar Cells
    (Pleiades Publishing, 2024) Sawrab Sikder; Hosen R.; Uddin M.S.; Haque M.M.; Mamur H.; Bhuiyan M.R.A.
    Abstract: Copper Indium Gallium Sulfide Selenide (CIGSSe)-based solar cells, featuring Al/ZnO/ZnMnO/CIGSSe/Cu2O/Ni layers, are optimized using the solar cell capacitance simulator (SCAPS) for enhanced photovoltaic (PV) performance. The solar cell design incorporates a CIGSSe absorber layer, a zinc manganese oxide (ZnMnO) buffer layer, and a zinc oxide (ZnO) window layer. The upper/top and back contacts are made of aluminum (Al) and nickel (Ni), respectively, with an electron-reflected-hole transport layer (ER-HTL) of cuprous oxide (Cu2O). The performance of the proposed structure can be improved by adjusting the thicknesses of the absorber, buffer, and window layers, along with the acceptor and donor concentrations of the absorber and buffer layers, series and shunt resistance, and temperature. The configuration improves the cell structure’s open-circuit voltage (VOC), short-circuit current (JSC), fill factor (FF), and power conversion efficiency (PCE). For optimal outcomes, set the acceptor and donor concentrations in the absorber and buffer layers to 1017 and 1018 cm–3, respectively. Furthermore, keep the thicknesses of the absorber layer at 2000 nm, the window and buffer layers at 50 nm, and the ER-HTL at 10 nm. The optimized model demonstrates PV performance characteristics of 1.0642 V for VOC, 36.10 mA/cm2 for JSC, 81.06% for FF, and 31.15% for PCE under the AM1.5G spectrum. Furthermore, it exhibits a quantum efficiency of around 95.23% at visible wavelengths. © Allerton Press, Inc. 2024. ISSN 0003-701X, Applied Solar Energy, 2024, Vol. 60, No. 2, pp. 201–214. Allerton Press, Inc., 2024.
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    Photovoltaic performance enhancement of Al/ZnO:Al/i-ZnO/CdS /CIGS/Pt solar cell using SCAPS-1D software
    (Elsevier B.V., 2024) Uddin M.S.; Hosen R.; Sikder S.; Mamur H.; Bhuiyan M.R.A.
    The high-performance Cu(In,Ga)Se2 (CIGS) absorber layer is simulated by the SCAPS-1D software. A CIGS absorber layer, a cadmium sulfide (CdS) buffer layer, intrinsic zinc oxide (i:ZnO), and aluminum-doped zinc oxide (Al:ZnO), also known as transparent conductive oxide (TCO), are all included in the cell structure. These layers are connected to upper/top and back contacts made of aluminum (Al) and platinum (Pt). All optimizations employed in cell structure have a thin layer of Al/ZnO:Al/i-ZnO/CdS/CIGS/Pt. The open-circuit voltage (Voc), short-circuit current (Jsc), fill factor (FF), and efficiency (η) were all investigated in this study, along with the effects of back contact, absorber and buffer layer thickness, the absorber layer's acceptor density, the buffer layer's donor density, the absorber and buffer layer's defect densities, performance of interface defect density, series and shunt resistance, and temperature. To achieve optimal performance, it is recommended to set the acceptor and donor densities for the absorber and buffer layers at 1018 cm−3, while maintaining defect densities at 1014 cm−3. These desired densities can be attained by using a window layer thickness of 200 nm, a buffer layer thickness of 40 nm, and an absorber layer thickness of 2500 nm. The optimized model demonstrates photovoltaic (PV) performance characteristics of 0.8975 V for VOC, 34.245732 mA/cm2 for JSC, 86.81% for FF, and 26.68% for power conversion efficiency (PCE) under the AM 1.5 G spectrum. Furthermore, it exhibits a quantum efficiency of 98.86% at visible wavelengths. © 2023 The Authors