Effect of various layers on improving the photovoltaic efficiency of Al/ZnO/CdS/CdTe/Cu2O/Ni solar cells

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dc.contributor.authorHosen R.
dc.contributor.authorSikder S.
dc.contributor.authorUddin M.S.
dc.contributor.authorHaque M.M.
dc.contributor.authorMamur H.
dc.contributor.authorBhuiyan M.R.A.
dc.date.accessioned2024-07-22T08:02:11Z
dc.date.available2024-07-22T08:02:11Z
dc.date.issued2023
dc.description.abstractThe photovoltaic (PV) cell structure containing Al/ZnO/CdS/CdTe/Cu2O/Ni has been simulated using the SCAPS-1D software. The PV device includes a zinc oxide (ZnO) transparent conductive oxide (TCO) window layer, a cadmium sulfide (CdS) buffer layer, and a cadmium telluride (CdTe) absorber layer. Additionally, an electron reflected-hole transport layer (ER-HTL) comprising cuprous oxide (Cu2O) is introduced between the absorber layer and the back metal contact. Aluminum (Al) and nickel (Ni) serve as the upper/top and back contact materials, respectively, interconnecting the layers. The back contact materials, the thickness of the absorber, buffer, and window layers, the acceptor density of the absorber layer, the donor density of the buffer layer, the series and shunt resistance, as well as temperature, were all modified to investigate the PV performance of this structure. The PV performance parameters are evaluated through the open-circuit voltage (VOC), short-circuit current (JSC), fill factor (FF), and power conversion efficiency (PCE). To achieve optimal performance, it is recommended to set the acceptor and donor densities for the absorber and buffer layers at 1017 cm−3. These desired densities can be attained by using a window and buffer layer thickness of 100 nm, an absorber layer thickness of 2500 nm, and an ER-HTL of 50 nm. The optimized model demonstrates PV performance characteristics of 1.4811 V for VOC, 28.682434 mA/cm2 for JSC, 74.91 % for FF, and 31.82 % for PCE under the AM 1.5 G spectrum. Furthermore, it exhibits a quantum efficiency of around 100 % at visible wavelengths. © 2023 The Authors
dc.identifier.DOI-ID10.1016/j.jalmes.2023.100041
dc.identifier.issn29499178
dc.identifier.urihttp://akademikarsiv.cbu.edu.tr:4000/handle/123456789/11756
dc.language.isoEnglish
dc.publisherElsevier B.V.
dc.rightsAll Open Access; Gold Open Access
dc.subjectAluminum compounds
dc.subjectBuffer layers
dc.subjectCadmium sulfide
dc.subjectCadmium sulfide solar cells
dc.subjectCadmium telluride
dc.subjectConversion efficiency
dc.subjectCopper oxides
dc.subjectII-VI semiconductors
dc.subjectPhotovoltaic effects
dc.subjectShort circuit currents
dc.subjectSolar power generation
dc.subjectTiming circuits
dc.subjectZinc oxide
dc.subjectAbsorber layers
dc.subjectAcceptor density
dc.subjectAluminum zinc oxides
dc.subjectCadmium telluride-based solar cell
dc.subjectDonor density
dc.subjectFill-factor
dc.subjectOpen-circuit voltages
dc.subjectPhotovoltaic performance
dc.subjectSCAPS-1D
dc.subjectShort-circuit currents
dc.subjectOpen circuit voltage
dc.titleEffect of various layers on improving the photovoltaic efficiency of Al/ZnO/CdS/CdTe/Cu2O/Ni solar cells
dc.typeArticle

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