Improved performance of near UV-blue n-ZnO/p-GaN heterostructure LED with an AlN electron blocking layer

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dc.contributor.authorÜnal D.
dc.contributor.authorVarol S.F.
dc.contributor.authorBrault J.
dc.contributor.authorChenot S.
dc.contributor.authorAl Khalfioui M.
dc.contributor.authorMerdan Z.
dc.date.accessioned2024-07-22T08:04:35Z
dc.date.available2024-07-22T08:04:35Z
dc.date.issued2022
dc.description.abstractHigh quality single crystalline n-type ZnO films, with a thickness of 200 nm, were grown on top of AlN/GaN layers under 25 W, 50 W and 100 W sputtering powers. The AlN and p-type GaN layers were deposited by metalorganic chemical vapor deposition (MOCVD). From X-ray diffraction measurements, the samples exhibited the (000l) peaks corresponding to both ZnO, GaN and AlN monocrystalline layers. As the sputtering power was increased, the ZnO grain size increased and the dislocation density decreased. This result is supported by a reduction of the rms values obtained on the ZnO layers from Atomic Force Microscopy (AFM) results. In addition, photoluminescence peaks of ZnO at 372 nm, 375 nm and 380 nm were seen as dependent on the sputtering power. We have used an AlN electron blocking layer between ZnO and GaN films to improve the electroluminescence from the n-ZnO side. Room temperature electroluminescence (EL) of the LEDs demonstrated near UV-blue emission consisting of predominating peaks centred at 405 nm, 390 nm and 380 nm for the device with ZnO deposited at 25 W, 50 W and 100 W sputtering powers, respectively. Moreover, the I-V curves of the LEDs showed a rectifying behavior with 6.8 V, 6.4 V, 5.2 V threshold voltages for 25 W, 50 W and 100 W values. © 2022 Elsevier B.V.
dc.identifier.DOI-ID10.1016/j.mee.2022.111830
dc.identifier.issn01679317
dc.identifier.urihttp://akademikarsiv.cbu.edu.tr:4000/handle/123456789/12763
dc.language.isoEnglish
dc.publisherElsevier B.V.
dc.subjectAluminum nitride
dc.subjectElectroluminescence
dc.subjectEtching
dc.subjectGallium nitride
dc.subjectII-VI semiconductors
dc.subjectIII-V semiconductors
dc.subjectMetallorganic chemical vapor deposition
dc.subjectOrganometallics
dc.subjectSapphire
dc.subjectSputtering
dc.subjectThreshold voltage
dc.subjectWide band gap semiconductors
dc.subjectE beam evaporation
dc.subjectElectron blocking layer
dc.subjectGaN layers
dc.subjectHigh quality
dc.subjectLightemitting diode
dc.subjectMagnetron-sputtering
dc.subjectMetal-organic chemical vapour depositions
dc.subjectPerformance
dc.subjectSputtering power
dc.subjectZnO films
dc.subjectZinc oxide
dc.titleImproved performance of near UV-blue n-ZnO/p-GaN heterostructure LED with an AlN electron blocking layer
dc.typeArticle

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