Chemical solution deposited silver tantalate niobate, Ag x (Ta0.5Nb0.5)O3-y , thin films on (111)Pt/Ti/SiO2/(100)Si substrates

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dc.contributor.authorTelli M.B.
dc.contributor.authorTrolier-Mckinstry S.
dc.contributor.authorWoodward D.I.
dc.contributor.authorReaney I.M.
dc.date.accessioned2024-07-22T08:22:49Z
dc.date.available2024-07-22T08:22:49Z
dc.date.issued2007
dc.description.abstractSilver tantalate niobate films are candidates for temperature stable microwave dielectrics. In this work, a chemical solution deposition synthesis method was developed for Ag x (Ta0.5Nb0.5) O3-y films on Pt-coated Si substrates. Stable solutions with a range of silver stoichiometries were prepared using 2-methoxyethanol and pyridine as solvents, from AgNO3 and Nb and Ta ethoxide precursors. It was extremely difficult to prepare phase-pure perovskite films of Ag(Ta 0.5Nb0.5)O3 on Pt-coated Si subtrates; instead a mixture of perovskite and natrotantite phases was identified. Such mixed phase films had dielectric constant r and dielectric loss tanδ values ranging from 200±20 to 270±25 and 0.006±0.002 to 0.002±0.001 at 100kHz, respectively, depending on the firing temperature. For Ag2(Ta0.5Nb0.5)4O11, Ag0.8(Ta0.5Nb0.5)O2.9, Ag 0.85(Ta0.5Nb0.5)O2.925 and Ag 0.9(Ta0.5Nb0.5)O2.95 films, mainly the natrotantite phase was observed. The r values of these films were between 70±10 and 130±15 with tan δ values of 0.008±0.002 at 100 kHz. © Springer Science + Business Media, LLC 2007.
dc.identifier.DOI-ID10.1007/s10971-006-0204-8
dc.identifier.issn09280707
dc.identifier.urihttp://akademikarsiv.cbu.edu.tr:4000/handle/123456789/19254
dc.language.isoEnglish
dc.subjectDeposition
dc.subjectHeat treatment
dc.subjectPermittivity
dc.subjectSilver compounds
dc.subjectStoichiometry
dc.subjectSynthesis (chemical)
dc.subjectChemical solution deposition (CSD)
dc.subjectNatrotantite phases
dc.subjectSilicon substrate
dc.subjectSilver tantalate niobate
dc.subjectThin films
dc.titleChemical solution deposited silver tantalate niobate, Ag x (Ta0.5Nb0.5)O3-y , thin films on (111)Pt/Ti/SiO2/(100)Si substrates
dc.typeArticle

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