Indications of bulk property changes from surface ion implantation

Simple item page
dc.contributor.authorWang Y.
dc.contributor.authorYang B.
dc.contributor.authorCan N.
dc.contributor.authorTownsend P.D.
dc.date.accessioned2024-07-22T08:20:21Z
dc.date.available2024-07-22T08:20:21Z
dc.date.issued2011
dc.description.abstractIn the majority of cases, the effects of ion implantation are confined close to the implant zone but, potentially, the resultant distortions and chemical modifications could catalyse relaxations extending into the bulk substrate. Such possibilities are rarely considered but the present data suggest that high dose ion implantation of ZnO has induced bulk changes. Surface implants with Cu and Tb strongly modified the low temperature bulk thermoluminescence properties generated by X-ray irradiation. Suggestions are proposed for the possible mechanisms for bulk relaxations and structural characteristics, which may indicate where such instability may occur in other lattice structures. © 2011 Taylor & Francis.
dc.identifier.DOI-ID10.1080/14786435.2010.518986
dc.identifier.issn14786435
dc.identifier.urihttp://akademikarsiv.cbu.edu.tr:4000/handle/123456789/18119
dc.language.isoEnglish
dc.publisherTaylor and Francis Ltd.
dc.rightsAll Open Access; Green Open Access
dc.subjectChemical modification
dc.subjectII-VI semiconductors
dc.subjectIons
dc.subjectNanoparticles
dc.subjectPhase transitions
dc.subjectTemperature
dc.subjectThermoluminescence
dc.subjectZinc oxide
dc.subjectHigh-dose ion implantation
dc.subjectLattice structures
dc.subjectLow temperatures
dc.subjectPossible mechanisms
dc.subjectStructural characteristics
dc.subjectSurface implant
dc.subjectThermoluminescence properties
dc.subjectX ray irradiation
dc.subjectIon implantation
dc.titleIndications of bulk property changes from surface ion implantation
dc.typeArticle

Files

Collections

Scopus Koleksiyonu