Experimental and computational investigation of graphene/SAMs/n-Si Schottky diodes

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dc.contributor.authorAydin H.
dc.contributor.authorBacaksiz C.
dc.contributor.authorYagmurcukardes N.
dc.contributor.authorKarakaya C.
dc.contributor.authorMermer O.
dc.contributor.authorCan M.
dc.contributor.authorSenger R.T.
dc.contributor.authorSahin H.
dc.contributor.authorSelamet Y.
dc.date.accessioned2024-07-22T08:09:57Z
dc.date.available2024-07-22T08:09:57Z
dc.date.issued2018
dc.description.abstractWe have investigated the effect of two different self-assembled monolayers (SAMs) on electrical characteristics of bilayer graphene (BLG)/n-Si Schottky diodes. Novel 4″bis(diphenylamino)-1, 1′:3″-terphenyl-5′ carboxylic acids (TPA) and 4,4-di-9H-carbazol-9-yl-1,1′:3′1′-terphenyl-5′ carboxylic acid (CAR) aromatic SAMs have been used to modify n-Si surfaces. Cyclic voltammetry (CV) and Kelvin probe force microscopy (KPFM) results have been evaluated to verify the modification of n-Si surface. The current–voltage (I–V) characteristics of bare and SAMs modified devices show rectification behaviour verifying a Schottky junction at the interface. The ideality factors (n) from ln(I)–V dependences were determined as 2.13, 1.96 and 2.07 for BLG/n-Si, BLG/TPA/n-Si and BLG/CAR/n-Si Schottky diodes, respectively. In addition, Schottky barrier height (SBH) and series resistance (R s ) of SAMs modified diodes were decreased compared to bare diode due to the formation of a compatible interface between graphene and Si as well as π–π interaction between aromatic SAMs and graphene. The CAR-based device exhibits better diode characteristic compared to the TPA-based device. Computational simulations show that the BLG/CAR system exhibits smaller energy-level-differences than the BLG/TPA, which supports the experimental findings of a lower Schottky barrier and series resistance in BLG/CAR diode. © 2017 Elsevier B.V.
dc.identifier.DOI-ID10.1016/j.apsusc.2017.09.204
dc.identifier.issn01694332
dc.identifier.urihttp://akademikarsiv.cbu.edu.tr:4000/handle/123456789/15020
dc.language.isoEnglish
dc.publisherElsevier B.V.
dc.rightsAll Open Access; Green Open Access
dc.subjectAromatic compounds
dc.subjectCarboxylic acids
dc.subjectCyclic voltammetry
dc.subjectDiodes
dc.subjectElectric rectifiers
dc.subjectElectric resistance
dc.subjectGraphene
dc.subjectSelf assembled monolayers
dc.subjectSemiconductor junctions
dc.subjectSemiconductor metal boundaries
dc.subjectSilicon compounds
dc.subjectComputational investigation
dc.subjectComputational simulation
dc.subjectDiode characteristics
dc.subjectElectrical characteristic
dc.subjectKelvin probe force microscopy
dc.subjectSams
dc.subjectSchottky barrier heights
dc.subjectSchottky diodes
dc.subjectSchottky barrier diodes
dc.titleExperimental and computational investigation of graphene/SAMs/n-Si Schottky diodes
dc.typeArticle

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