Optimization of HIL-HTL-free naphthalimide: Isoquinoline TEOLEDs with BZO top electrode
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The present work focuses mainly on HIL/HTL-free TEOLEDs with furan-appended naphthalimide: isoquinoline (furan IQ) and morpholine-appended naphthalimide: isoquinoline (morpholine IQ), which were synthesized from the reaction between naphthalic anhydride and a substituent such as 2-furoic hydrazide or 4-aminomorpholine. Both of the emitters displayed aggregation-induced emission enhancement (AIEE) behavior. This new structure was constructed between modified indium tin oxide (ITO) with caesium fluoride (CsF) (5.18 eV) and boron-doped zinc oxide (BZO) (3.20 eV) with ideal work functions. The current densities were 400 mA.cm(-2) and 387 mA.cm(-2) and luminances were in the range of 9500 cd.m(-2) 9000 cd.m(-2) for the furan IQ and morpholine IQ emitters, respectively. We have introduced a new CsF-ITO/EML/LiF/BZO design with external quantum efficiencies (EQEs) of 9.50 % and 7.57%. We have achieved a standard deep violet/blue CIE coordinates of (0.15, 0.06) and (0.16, 0.05) for furan IQ and morpholine IQ emitters with a high color stability.