Luminescence characterisation of defects in pld alumina and copper implanted silica

Simple item page
dc.contributor.authorWu Z.
dc.contributor.authorTürkler A.
dc.contributor.authorBrooks R.
dc.contributor.authorHole D.E.
dc.contributor.authorTownsend P.D.
dc.contributor.authorKöster S.F.
dc.contributor.authorKurt K.
dc.contributor.authorGonzalo J.
dc.contributor.authorSuarez-Garcia A.
dc.date.accessioned2024-07-22T08:25:11Z
dc.date.available2024-07-22T08:25:11Z
dc.date.issued2002
dc.description.abstractLuminescence is reported for alumina and Al2O3:Cu films grown by pulsed laser deposition and is contrasted with luminescence from Cu ion implanted silica. The implanted samples display numerous emission bands with at least two associated to charge states or the Cu ions. The relative band intensities are altered by thermal treatments. In the case of the thin films the signals are sensitive to the growth conditions and show evidence for trapped Ar nanoparticles, from argon used as a background gas during film growth. Thus in both thin film and ion implanted material the luminescence offers a route to monitor the state of the defects and the copper impurity ions. © 2002 Published by Elsevier Science B.V. © 2002 Elsevier Science Ltd. All rights reserved.
dc.identifier.DOI-ID10.1016/S0168-583X(02)00524-4
dc.identifier.issn0168583X
dc.identifier.urihttp://akademikarsiv.cbu.edu.tr:4000/handle/123456789/20295
dc.language.isoEnglish
dc.subjectAlumina
dc.subjectCopper
dc.subjectFilm growth
dc.subjectHeat treatment
dc.subjectIon implantation
dc.subjectLuminescence
dc.subjectNanostructured materials
dc.subjectPulsed laser deposition
dc.subjectSilica
dc.subjectNanoparticles
dc.subjectThin films
dc.titleLuminescence characterisation of defects in pld alumina and copper implanted silica
dc.typeArticle

Files

Collections

Scopus Koleksiyonu