English
| dc.contributor.author | Içelli, O | |
| dc.contributor.author | Çankaya, G | |
| dc.contributor.author | Çetin, A | |
| dc.date.accessioned | 2024-07-18T11:58:43Z | |
| dc.date.available | 2024-07-18T11:58:43Z | |
| dc.description.abstract | ELSEVIER | |
| dc.identifier.issn | 1872-9576 | |
| dc.identifier.uri | http://akademikarsiv.cbu.edu.tr:4000/handle/123456789/7425 | |
| dc.language.iso | Article | |
| dc.publisher | 0168-9002 | |
| dc.subject | The linear differential scattering coefficients at 60 keV have been measured for GaAs, p-Si and n-Si semiconductors at seven angles ranging from 60 degrees to 120 degrees at intervals of 10 degrees. The results have been compared with relativistic and non-relativistic theoretical values. The objective of this work is to seek evidence whether there is a relationship between the LDSC and the scattering angle. The LDSCs have been measured with energy-dispersive X-ray fluorescence spectroscopy (EDXRF) for wafers as GaAs, n- and p-type Si. This is the first time the LDSCs have been measured at < 100 keV energies, so there is no comparable findings reported in the literature. (C) 2009 Elsevier B.V. All rights reserved. | |
| dc.title | English | |
| dc.type | ATOMIC FORM-FACTORS | |
| dc.type | KEV GAMMA-RAYS | |
| dc.type | COHERENT SCATTERING | |
| dc.type | ELASTIC-SCATTERING | |
| dc.type | CROSS-SECTIONS | |
| dc.type | KEV PHOTONS |