An experimental study on the linear differential scattering coefficients of the GaAs, n- and p-type Si
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Date
2009
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Abstract
The linear differential scattering coefficients at 60 keV have been measured for GaAs, p-Si and n-Si semiconductors at seven angles ranging from 60° to 120° at intervals of 10°. The results have been compared with relativistic and non-relativistic theoretical values. The objective of this work is to seek evidence whether there is a relationship between the LDSC and the scattering angle. The LDSCs have been measured with energy-dispersive X-ray fluorescence spectroscopy (EDXRF) for wafers as GaAs, n- and p-type Si. This is the first time the LDSCs have been measured at <100 keV energies, so there is no comparable findings reported in the literature. © 2009 Elsevier B.V. All rights reserved.
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Energy dispersive spectroscopy , Fluorescence , Fluorescence spectroscopy , Gallium arsenide , III-V semiconductors , Semiconducting gallium , Semiconducting gallium arsenide , X rays , Differential scattering , Energy dispersive X-ray fluorescence , Molecular scattering , P-type Si , Scattering angles , Theoretical values , X ray fluorescence spectrometry , Silicon wafers