An experimental study on the linear differential scattering coefficients of the GaAs, n- and p-type Si

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dc.contributor.authorIçelli O.
dc.contributor.authorÇankaya G.
dc.contributor.authorÇetin A.
dc.date.accessioned2024-07-22T08:21:45Z
dc.date.available2024-07-22T08:21:45Z
dc.date.issued2009
dc.description.abstractThe linear differential scattering coefficients at 60 keV have been measured for GaAs, p-Si and n-Si semiconductors at seven angles ranging from 60° to 120° at intervals of 10°. The results have been compared with relativistic and non-relativistic theoretical values. The objective of this work is to seek evidence whether there is a relationship between the LDSC and the scattering angle. The LDSCs have been measured with energy-dispersive X-ray fluorescence spectroscopy (EDXRF) for wafers as GaAs, n- and p-type Si. This is the first time the LDSCs have been measured at <100 keV energies, so there is no comparable findings reported in the literature. © 2009 Elsevier B.V. All rights reserved.
dc.identifier.DOI-ID10.1016/j.nima.2009.04.005
dc.identifier.issn01689002
dc.identifier.urihttp://akademikarsiv.cbu.edu.tr:4000/handle/123456789/18764
dc.language.isoEnglish
dc.publisherElsevier
dc.subjectEnergy dispersive spectroscopy
dc.subjectFluorescence
dc.subjectFluorescence spectroscopy
dc.subjectGallium arsenide
dc.subjectIII-V semiconductors
dc.subjectSemiconducting gallium
dc.subjectSemiconducting gallium arsenide
dc.subjectX rays
dc.subjectDifferential scattering
dc.subjectEnergy dispersive X-ray fluorescence
dc.subjectMolecular scattering
dc.subjectP-type Si
dc.subjectScattering angles
dc.subjectTheoretical values
dc.subjectX ray fluorescence spectrometry
dc.subjectSilicon wafers
dc.titleAn experimental study on the linear differential scattering coefficients of the GaAs, n- and p-type Si
dc.typeArticle

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