(00l) epitaxial AgTaO3 and AgNbO3 thin films on (001)SrRuO3/(001)LaAlO3 substrates by chemical solution deposition
| dc.contributor.author | Telli, MB | |
| dc.contributor.author | Bharadwaja, SSN | |
| dc.contributor.author | Biegalski, MD | |
| dc.contributor.author | Trolier-McKinstry, S | |
| dc.date.accessioned | 2024-07-18T12:03:34Z | |
| dc.date.available | 2024-07-18T12:03:34Z | |
| dc.description.abstract | (00l) epitaxial AgTaO3 and AgNbO3 thin films were prepared on (001)SrRuO3/(001)LaAlO3 substrates by chemical solution deposition. The dielectric constants and loss of similar to 300 nm thick films were 110 +/- 10 and 0.025 +/- 0.005 for AgTaO3 and 550 +/- 55 and 0.020 +/- 0.005 for AgNbO3 at room temperature. In both films, the temperature coefficient of capacitance is smaller than that for bulk ceramics of the same composition. The capacitance changes from -20 to 120 degrees C were <= 1.2% for AgTaO3 and <= 3.6% for AgNbO3. The tunability of the AgTaO3 film was 1.6% at 230 kV/cm field, while 21% tunability was measured for AgNbO3 at 190 kV/cm. (c) 2006 American Institute of Physics. | |
| dc.identifier.issn | 0003-6951 | |
| dc.identifier.other | 1077-3118 | |
| dc.identifier.uri | http://akademikarsiv.cbu.edu.tr:4000/handle/123456789/9203 | |
| dc.language.iso | English | |
| dc.publisher | AMER INST PHYSICS | |
| dc.subject | CERAMICS | |
| dc.title | (00l) epitaxial AgTaO3 and AgNbO3 thin films on (001)SrRuO3/(001)LaAlO3 substrates by chemical solution deposition | |
| dc.type | Article |