Cathodoluminescence response from rare earth doped Bi4Ge 3O12

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dc.contributor.authorKibar R.
dc.contributor.authorÇetin A.
dc.contributor.authorTuncer Y.
dc.contributor.authorUysal S.
dc.contributor.authorTownsend P.D.
dc.contributor.authorCanimoglu A.
dc.contributor.authorKarali T.
dc.contributor.authorCan N.
dc.date.accessioned2025-04-10T11:16:17Z
dc.date.available2025-04-10T11:16:17Z
dc.date.issued2009
dc.description.abstractRoom and low temperature cathodoluminescence (CL) of rare earth doped Bi4Ge3O12 (BGO) has been recorded. Luminescence signals noted in the wavelength range (300 - 800 nm) include intrinsic broad emission bands and signals related to Eu3+, Nd3+, and Tm3+. CL measurements made on Bi4Ge3O 12 (BGO) doped with rare earth ions are reported for the temperature range 40 to 300 K with different CL excitation modulation frequencies. Dopant levels used in the present study are 1.1, 0.4, and 0.3 wt% Nd, 0.4 wt% Tm and 3 ppm Eu. All dopant levels exhibited different CL spectra with evidence for lines due to the rare-earth dopants intra-4f transitions. The temperature dependence of the intensity of the emission band is discussed.
dc.identifier.DOI-ID10.1016/j.phpro.2009.07.023
dc.identifier.urihttp://hdl.handle.net/20.500.14701/51695
dc.publisherElsevier B.V.
dc.titleCathodoluminescence response from rare earth doped Bi4Ge 3O12
dc.typeConference paper

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