Experimental and computational investigation of graphene/SAMs/n-Si Schottky diodes
| dc.contributor.author | Aydin H. | |
| dc.contributor.author | Bacaksiz C. | |
| dc.contributor.author | Yagmurcukardes N. | |
| dc.contributor.author | Karakaya C. | |
| dc.contributor.author | Mermer O. | |
| dc.contributor.author | Can M. | |
| dc.contributor.author | Senger R.T. | |
| dc.contributor.author | Sahin H. | |
| dc.contributor.author | Selamet Y. | |
| dc.date.accessioned | 2025-04-10T11:08:10Z | |
| dc.date.available | 2025-04-10T11:08:10Z | |
| dc.date.issued | 2018 | |
| dc.description.abstract | We have investigated the effect of two different self-assembled monolayers (SAMs) on electrical characteristics of bilayer graphene (BLG)/n-Si Schottky diodes. Novel 4″bis(diphenylamino)-1, 1′:3″-terphenyl-5′ carboxylic acids (TPA) and 4,4-di-9H-carbazol-9-yl-1,1′:3′1′-terphenyl-5′ carboxylic acid (CAR) aromatic SAMs have been used to modify n-Si surfaces. Cyclic voltammetry (CV) and Kelvin probe force microscopy (KPFM) results have been evaluated to verify the modification of n-Si surface. The current–voltage (I–V) characteristics of bare and SAMs modified devices show rectification behaviour verifying a Schottky junction at the interface. The ideality factors (n) from ln(I)–V dependences were determined as 2.13, 1.96 and 2.07 for BLG/n-Si, BLG/TPA/n-Si and BLG/CAR/n-Si Schottky diodes, respectively. In addition, Schottky barrier height (SBH) and series resistance (R s ) of SAMs modified diodes were decreased compared to bare diode due to the formation of a compatible interface between graphene and Si as well as π–π interaction between aromatic SAMs and graphene. The CAR-based device exhibits better diode characteristic compared to the TPA-based device. Computational simulations show that the BLG/CAR system exhibits smaller energy-level-differences than the BLG/TPA, which supports the experimental findings of a lower Schottky barrier and series resistance in BLG/CAR diode. © 2017 Elsevier B.V. | |
| dc.identifier.DOI-ID | 10.1016/j.apsusc.2017.09.204 | |
| dc.identifier.uri | http://hdl.handle.net/20.500.14701/47844 | |
| dc.publisher | Elsevier B.V. | |
| dc.title | Experimental and computational investigation of graphene/SAMs/n-Si Schottky diodes | |
| dc.type | Article |