English
| dc.contributor.author | Lee, HJ | |
| dc.contributor.author | Lee, SH | |
| dc.contributor.author | Yildiz, F | |
| dc.contributor.author | Jeong, YH | |
| dc.date.accessioned | 2024-07-18T11:55:33Z | |
| dc.date.available | 2024-07-18T11:55:33Z | |
| dc.description.abstract | ELSEVIER | |
| dc.identifier.issn | 1873-4766 | |
| dc.identifier.uri | http://akademikarsiv.cbu.edu.tr:4000/handle/123456789/6481 | |
| dc.language.iso | Article | |
| dc.publisher | 0304-8853 | |
| dc.subject | We examined growth conditions to obtain the best quality epitaxial Co-doped ZnO thin films by the laser MBE deposition technique. The RHEED pattern and XRD analysis showed that the growth mode is layer-by-layer and a single phase of the wurtzite ZnO structure results at the optimum growth condition, that is, laser fluence, oxygen partial pressure and substrate temperature being at 0.45 J/cm(2), 1.0 x 10(-6) torr and 550 degrees C, respectively. From AFM measurements, the root mean square value of surface roughness was determined to be about 2 angstrom. The epitaxial Co-doped ZnO thin films were shown to possess intrinsic ferromagnetic ordering at room temperature. (c) 2006 Elsevier B.V. All rights reserved. | |
| dc.title | English | |
| dc.type | SEMICONDUCTORS |