Experimental and computational investigation of graphene/SAMs/n-Si Schottky diodes

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dc.contributor.authorAydin, H
dc.contributor.authorBacaksiz, C
dc.contributor.authorYagmurcukardes, N
dc.contributor.authorKarakaya, C
dc.contributor.authorMermer, O
dc.contributor.authorCan, M
dc.contributor.authorSenger, RT
dc.contributor.authorSahin, H
dc.contributor.authorSelamet, Y
dc.date.accessioned2024-07-18T12:05:07Z
dc.date.available2024-07-18T12:05:07Z
dc.description.abstractWe have investigated the effect of two different self-assembled monolayers (SAMs) on electrical characteristics of bilayer graphene (BLG)/n-Si Schottky diodes. Novel 4bis(diphenylamino)-1, 1':3-terpheny1-5' carboxylic acids (TPA) and 4,4-di-9H-carbazol-9-y1-1,1':3'1'-terpheny1-5' carboxylic acid (CAR) aromatic SAMs have been used to modify n-Si surfaces. Cyclic voltammetry (CV) and Kelvin probe force microscopy (KPFM) results have been evaluated to verify the modification of n-Si surface. The current-voltage (I-V) characteristics of bare and SAMs modified devices show rectification behaviour verifying a Schottky junction at the interface. The ideality factors (n) from ln(I)-V dependences were determined as 2.13,1.96 and 2.07 for BLG/n-Si, BLG/TPA/n-Si and BLG/CAR/n-Si Schottky diodes, respectively. In addition, Schottky barrier height (SBH) and series resistance (Rs) of SAMs modified diodes were decreased compared to bare diode due to the formation of a compatible interface between graphene and Si as well as n-n interaction between aromatic SAMs and graphene. The CAR-based device exhibits better diode characteristic compared to the TPA-based device. Computational simulations show that the BLG/CAR system exhibits smaller energy-level-differences than the BLG/TPA, which supports the experimental findings of a lower Schottky barrier and series resistance in BLG/CAR diode. (C) 2017 Elsevier B.V. All rights reserved.
dc.identifier.issn0169-4332
dc.identifier.other1873-5584
dc.identifier.urihttp://akademikarsiv.cbu.edu.tr:4000/handle/123456789/9560
dc.language.isoEnglish
dc.publisherELSEVIER SCIENCE BV
dc.subjectSELF-ASSEMBLED MONOLAYERS
dc.subjectLARGE-AREA
dc.subjectELECTRICAL-TRANSPORT
dc.subjectDEGRADATION
dc.subjectTRANSISTORS
dc.subjectLAYER
dc.subjectFILMS
dc.titleExperimental and computational investigation of graphene/SAMs/n-Si Schottky diodes
dc.typeArticle

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