Luminescence properties of Tb implanted ZnO

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dc.contributor.authorCetin, A
dc.contributor.authorKibar, R
dc.contributor.authorSelvi, S
dc.contributor.authorTownsend, PD
dc.contributor.authorCan, N
dc.date.accessioned2024-07-18T12:03:43Z
dc.date.available2024-07-18T12:03:43Z
dc.description.abstractZnO [0 0 0 1] crystals were irradiated at room temperature with Tb+ ions of 400 keV with fluences from 1 x 10(16) to 2 x 10(17) cm(-2). The implanted layer was examined by several methods, including radioluminescence (RL), Rutherford backscattering spectrometry (RBS) and optical spectroscopy. The optical extinction spectra were simulated using Mie scattering theory. Absorption spectra predicted by Mie theory for particles of decreasing diameter were compared with those obtained experimentally. Some qualitative agreement between theoretical and experimental data was achieved. It was also shown that the intensities of the characteristic green emission bands associated with Tb produced by D-5(4) -> F-7(j=5,4) transitions have increased about 8 times after annealing. Optical spectroscopy and radioluminescence data have revealed that the ion implantation is a promising tool for synthesizing Tb nanoparticles in the ZnO surface. The Tb nanoparticles exhibit a rather weak plasma resonance. (C) 2009 Elsevier B.V. All rights reserved.
dc.identifier.issn0921-4526
dc.identifier.other1873-2135
dc.identifier.urihttp://akademikarsiv.cbu.edu.tr:4000/handle/123456789/9318
dc.language.isoEnglish
dc.publisherELSEVIER
dc.subjectOPTICAL-PROPERTIES
dc.subjectER
dc.subjectRELAXATION
dc.subjectFEATURES
dc.subjectSOL
dc.subjectUV
dc.titleLuminescence properties of Tb implanted ZnO
dc.typeArticle

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