English

dc.contributor.authorVarol, SF
dc.contributor.authorSayin, S
dc.contributor.authorMerdan, Z
dc.date.accessioned2024-07-18T11:57:43Z
dc.date.available2024-07-18T11:57:43Z
dc.description.abstractPERGAMON-ELSEVIER SCIENCE LTD
dc.identifier.issn1879-2405
dc.identifier.urihttp://akademikarsiv.cbu.edu.tr:4000/handle/123456789/7141
dc.language.isoArticle
dc.publisher0038-1101
dc.subjectThe present work focuses mainly on HIL/HTL-free TEOLEDs with furan-appended naphthalimide: isoquinoline (furan IQ) and morpholine-appended naphthalimide: isoquinoline (morpholine IQ), which were synthesized from the reaction between naphthalic anhydride and a substituent such as 2-furoic hydrazide or 4-aminomorpholine. Both of the emitters displayed aggregation-induced emission enhancement (AIEE) behavior. This new structure was constructed between modified indium tin oxide (ITO) with caesium fluoride (CsF) (5.18 eV) and boron-doped zinc oxide (BZO) (3.20 eV) with ideal work functions. The current densities were 400 mA.cm(-2) and 387 mA.cm(-2) and luminances were in the range of 9500 cd.m(-2) 9000 cd.m(-2) for the furan IQ and morpholine IQ emitters, respectively. We have introduced a new CsF-ITO/EML/LiF/BZO design with external quantum efficiencies (EQEs) of 9.50 % and 7.57%. We have achieved a standard deep violet/blue CIE coordinates of (0.15, 0.06) and (0.16, 0.05) for furan IQ and morpholine IQ emitters with a high color stability.
dc.titleEnglish
dc.typeLIGHT-EMITTING-DIODES
dc.typeINDIUM-TIN-OXIDE
dc.typeACTIVATED DELAYED FLUORESCENCE
dc.typeHIGH WORK FUNCTION
dc.typeZNO THIN-FILMS
dc.typeHOLE-INJECTION
dc.typeEFFICIENT
dc.typeBLUE
dc.typePERFORMANCE
dc.typeLAYER

Files